(Hong Kong)
Product Summary
The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.
Parametrics
2N3019 absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): 140 V; (2)VCEO Collector-Emitter Voltage (IB = 0): 80 V; (3)VEBO Emitter-Base Voltage (IC = 0): 7 V; (4)IC Collector Current: 1 A; (5)Ptot Total Dissipation:0.8W; (6)Tstg Storage Temperature: -65 to 175℃; (7)Tj Max. Operating Junction Temperature: 175℃.
Features
2N3019 features: (1)ICBO, collector cut-off current: 10nA; (2)IEBO, emitter cut-off current: 10nA; (3)V(BR)CBO, collector base breakdown voltage: 140V; (4)V(BR)CEO, collector-emitter breakdown voltage: 80V.
Diagrams
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 2N3019CSM |
Other |
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Data Sheet |
Negotiable |
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2N3019DCSM |
Other |
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Data Sheet |
Negotiable |
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2N3019S |
Other |
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Data Sheet |
Negotiable |
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2N3019 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN General Purpose |
Data Sheet |
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