(Hong Kong)
Product Summary
The SUD40N10-25-E3 is an N-Channel 100-V (D-S) 175 ℃ MOSFET.
Parametrics
SUD40N10-25-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 100V; (2)Gate-Source Voltage, VGS: ± 20V; (3)Continuous Drain Current (TJ = 175 ℃, ID: 40A when Tc=25℃ 23A when TC = 125 ℃ (4)Pulsed Drain Current, IDM: 70A; (5)Continuous Source Current (Diode Conduction), IS: 40A; (6)Avalanche Current, IAS: 40A; (7)Single Pulse Avalanche Energy (Duty Cycle ≤1 %), EAS: 80 mJ when L = 0.1 mH; (8)Operating Junction and Storage Temperature Range, TJ, Tstg: - 55 to 175 ℃.
Features
SUD40N10-25-E3 features: (1)TrenchFET Power MOSFET; (2)175℃Maximum Junction Temperature; (3)100 % Rg Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 SUD40N10-25-E3 |
Vishay/Siliconix |
MOSFET 100V 40A 33W |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SUD40N02-08 |
Vishay/Siliconix |
MOSFET 20V 40A 71W |
Data Sheet |
Negotiable |
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SUD40N02-08-E3 |
Vishay/Siliconix |
MOSFET 20V 40A 71W |
Data Sheet |
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SUD40N02-3m3P |
Other |
|
Data Sheet |
Negotiable |
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SUD40N03-18P |
Vishay/Siliconix |
MOSFET 30V 40A 62.5W |
Data Sheet |
Negotiable |
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SUD40N03-18P-E3 |
Vishay/Siliconix |
MOSFET 30V 40A 62.5W |
Data Sheet |
Negotiable |
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SUD40N04-10A |
Vishay/Siliconix |
MOSFET 40V 40A 71W |
Data Sheet |
Negotiable |
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