Product Summary

The STD4NK60Z-1 is a 4 A SuperMESH Power MOSFET. It is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout.

Parametrics

STD4NK60Z-1 absolute maximum ratings: (1)Drain-source voltage (VGS = 0):600 V; (2)Gate- source voltage:±30 V; (3)Drain current (continuous) at TC = 25℃:4A; (4)Drain current (continuous) at TC = 100℃:2.5A; (5)Drain current (pulsed):16A; (6)Total dissipation at TC = 25℃:70W; (7)Derating factor:0.56W/℃; (8)Gate source ESD(HBM-C=100 pF, R=1.5 kΩ):3000 V; (9)Peak diode recovery voltage slope:4.5 V/ns; (10)Insulation withstand voltage (RMS) from all ; (11)Storage temperature:-55℃ to 150℃; (12)Max operating junction temperature:150℃.

Features

STD4NK60Z-1 features: (1)100% avalanche tested; (2)Very low intrinsic capacitances.

Diagrams

STD4NK60Z-1 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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