(Hong Kong)
Product Summary
The STB40NF10T4 is a Power MOSFET. It is the latest development of STMicroelectronis unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. The STB40NF10T4 is suitable for Switching application.
Parametrics
STB40NF10T4 absolute maximum ratings: (1)VDS Drain-source voltage (VGS = 0): 100 V; (2)VDGR Drain-gate voltage (RGS = 20 kΩ): 100 V; (3)VGS Gate- source voltage: ± 20 V; (4)ID, Drain current (continuous) at TC = 25℃: 50 A; (5)ID, Drain current (continuous) at TC = 100℃: 35 A; (6)IDM, Drain current (pulsed): 200 A; (7)Ptot, Total dissipation at TC = 25℃: 150 W; (8)Derating Factor: 1 W/℃; (9)dv/dt, Peak diode recovery avalanche energy: 20 V/ns; (10)EAS, Single pulse avalanche energy: 150 mJ; (11)Tstg, Storage temperature: -50 to 175 ℃; (12)Tj, Max. operating junction temperature: -50 to 175℃.
Features
STB40NF10T4 features: (1)Exceptional dv/dt capability; (2)Low gate charge at 100℃; (3)100% avalanche tested; (4)Application oriented characterization.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 STB40NF10T4 |
STMicroelectronics |
MOSFET N-Ch 100 Volt 50 Amp |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
STB40N20 |
STMicroelectronics |
MOSFET N-Ch 200 V 0.38 Ohm 40 A STripFET |
Data Sheet |
Negotiable |
|
||||||||||||
 |
STB40NE03L-20 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
STB40NF03L |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
STB40NF10 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
STB40NF10-1 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
STB40NF10L |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
