Product Summary
The SI7336ADP-T1-E3 is an N-Channel 30-V (D-S) MOSFET for the original Si7336DP. The SI7336ADP-T1-E3 has lower on-resistance, otherwise, both part numbers perform identically.
Parametrics
SI7336ADP-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ±20 V; (3)Continuous Drain Current: 18 A at TA = 25℃, 15 A at TA = 70℃ (4)Pulsed Drain Current: 70 A; (5)Continuous Source Current (MOSFET Diode Conduction): 1.8 A; (6)Avalanche Current: 50 A at L = 1.0 mH; (7)Power Dissipation: 1.9 W at TA = 25℃, 1.2 W at TA = 70℃; (8)Operating Junction and Storage Temperature Range: -55 to 150 ℃; (9)Maximum Junction-to-Ambient: 65 ℃/W; (10)Maximum Junction-to-Case (Drain): 1.5℃/W.
Features
SI7336ADP-T1-E3 aeatures: (1)Halogen-free available; (2)Ultra-Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology; (3)Qg Optimized; (4)New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile; (5)100 % Rg Tested; (6)100 % UIS Tested.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SI7336ADP-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 30A 5.4W 3.0mohm @10V |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SI7302DN-T1-E3 |
MOSFET N-CH 220V PWRPAK 1212-8 |
Data Sheet |
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SI7302DN-T1-GE3 |
MOSFET N-CH 220V PWRPAK 1212-8 |
Data Sheet |
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Si7308DN |
Other |
Data Sheet |
Negotiable |
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SI7308DN-T1-GE3 |
Vishay/Siliconix |
MOSFET 60V 6.0A 19.8W 58mohm @ 10V |
Data Sheet |
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Si7309DN |
Other |
Data Sheet |
Negotiable |
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SI7309DN-T1-E3 |
Vishay/Siliconix |
MOSFET 60V 8.0A 19.8W 115mohm @ 10V |
Data Sheet |
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