Product Summary

The SI7336ADP-T1-E3 is an N-Channel 30-V (D-S) MOSFET for the original Si7336DP. The SI7336ADP-T1-E3 has lower on-resistance, otherwise, both part numbers perform identically.

Parametrics

SI7336ADP-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ±20 V; (3)Continuous Drain Current: 18 A at TA = 25℃, 15 A at TA = 70℃ (4)Pulsed Drain Current: 70 A; (5)Continuous Source Current (MOSFET Diode Conduction): 1.8 A; (6)Avalanche Current: 50 A at L = 1.0 mH; (7)Power Dissipation: 1.9 W at TA = 25℃, 1.2 W at TA = 70℃; (8)Operating Junction and Storage Temperature Range: -55 to 150 ℃; (9)Maximum Junction-to-Ambient: 65 ℃/W; (10)Maximum Junction-to-Case (Drain): 1.5℃/W.

Features

SI7336ADP-T1-E3 aeatures: (1)Halogen-free available; (2)Ultra-Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology; (3)Qg Optimized; (4)New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile; (5)100 % Rg Tested; (6)100 % UIS Tested.

Diagrams

SI7336ADP-T1-E3 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI7336ADP-T1-E3
SI7336ADP-T1-E3
Vishay/Siliconix
MOSFET 30V 30A 5.4W 3.0mohm @10V
Data Sheet
0-1: $0.98
1-10: $0.77
10-100: $0.70
100-250: $0.61
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI7302DN-T1-E3
SI7302DN-T1-E3

MOSFET N-CH 220V PWRPAK 1212-8
Data Sheet
0-3000: $0.76
SI7302DN-T1-GE3
SI7302DN-T1-GE3

MOSFET N-CH 220V PWRPAK 1212-8
Data Sheet
0-3000: $0.76
Si7308DN
Si7308DN
Other

Data Sheet
Negotiable 
SI7308DN-T1-E3
SI7308DN-T1-E3
Vishay/Siliconix
MOSFET 60V 6.0A 19.8W
Data Sheet
0-1: $0.77
1-10: $0.61
10-100: $0.55
100-250: $0.47
SI7308DN-T1-GE3
SI7308DN-T1-GE3
Vishay/Siliconix
MOSFET 60V 6.0A 19.8W 58mohm @ 10V
Data Sheet
0-1: $0.77
1-10: $0.58
10-100: $0.54
100-250: $0.47
Si7309DN
Si7309DN
Other

Data Sheet
Negotiable