Product Summary

The RFP3055LE is a 11A, 60V N-Channel enhancement-mode power MOSFET. It is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. The transistor can be operated directly from integrated circuits.

Parametrics

RFP3055LE absolute maximum ratings: (1)Drain to Source Voltage VDSS: 60 V; (2)Drain to Gate Voltage (RGS= 20kΩ) VDGR: 60 V; (3)Gate to Source Voltage VGS: ±16 V; (4)Continuous Drain Current ID: 11A; (5)Pulsed Drain Current IDM: Refer to Peak Current Curve; (6)Single Pulse Avalanche Rating EAS: Refer to UIS Curve; (7)Power Dissipation PD: 38W; Derate Above 25℃: 0.25W/℃; (8)Operating and Storage Temperature TJ, TSTG: -55 to 175℃; (9)Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s TL: 300℃; Package Body for 10s, See Techbrief 334 Tpkg: 260℃.

Features

RFP3055LE features: (1)11A, 60V; (2)rDS(ON)= 0.107Ω; (3)Temperature Compensating PSPICE Model; (4)Peak Current vs Pulse Width Curve; (5)UIS Rating Curve; (6)Related Literature: TB334 Guidelines for Soldering Surface Mount Components to PC Boards.

Diagrams

RFP3055LE test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
RFP3055LE
RFP3055LE
Fairchild Semiconductor
MOSFET TO-220AB N-Ch Power
Data Sheet
Negotiable 
RFP3055LE_Q
RFP3055LE_Q
Fairchild Semiconductor
MOSFET TO-220AB N-Ch Power
Data Sheet
Negotiable