Product Summary

The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

Parametrics

2N3019 absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): 140 V; (2)VCEO Collector-Emitter Voltage (IB = 0): 80 V; (3)VEBO Emitter-Base Voltage (IC = 0): 7 V; (4)IC Collector Current: 1 A; (5)Ptot Total Dissipation:0.8W; (6)Tstg Storage Temperature: -65 to 175℃; (7)Tj Max. Operating Junction Temperature: 175℃.

Features

2N3019 features: (1)ICBO, collector cut-off current: 10nA; (2)IEBO, emitter cut-off current: 10nA; (3)V(BR)CBO, collector base breakdown voltage: 140V; (4)V(BR)CEO, collector-emitter breakdown voltage: 80V.

Diagrams

2N3019 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2N3019CSM
2N3019CSM

Other


Data Sheet

Negotiable 
2N3019DCSM
2N3019DCSM

Other


Data Sheet

Negotiable 
2N3019S
2N3019S

Other


Data Sheet

Negotiable 
2N3019
2N3019

STMicroelectronics

Transistors Bipolar (BJT) NPN General Purpose

Data Sheet

0-1: $0.51
1-10: $0.44
10-100: $0.43
100-250: $0.40