STE48NM50

Power MOSFET, MODULE, 500 V, 48 A, low input capacitance, low gate input resistance

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Price:: US $7.62~15.87 / piece [Get Latest Price]

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	US $7.62~15.87

PartNumber:: STE48NM50

Brand:: STMicroelectronics - ST | Pack: DIP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2012-06-26

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Part Number:STE48NM50
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Product Summary

The STE48NM50 is a Power MOSFET. It is a new revolutionary MOSFET technology that associates the Multiple Drain process with the PowerMESH of Company horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The STE48NM50 is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Parametrics

STE48NM50 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 500 V; (2)VDGR Drain-gate Voltage (RGS = 20 kΩ): 500 V; (3)VGS Gate- source Voltage: ±30 V; (4)ID Drain Current (continuous) at TC = 25℃: 48 A; (5)ID Drain Current (continuous) at TC = 100℃: 30 A; (6)IDM (l) Drain Current (pulsed): 192 A; (7)PTOT Total Dissipation at TC = 25℃: 450 W; (8)Derating Factor: 3.6 W/℃; (9)dv/dt (1) Peak Diode Recovery voltage slope: 15 V/ns; (10)Tstg Storage Temperature: –65 to 150 ℃; (11)Tj Max. Operating Junction Temperature: 150 ℃.

Features

STE48NM50 features: (1)typical rds(on) = 0.08ω; (2)high dv/dt and avalanche capabilities; (3)100% avalanche tested; (4)low input capacitance and gate charge; (5)low gate input resistance; (6)tight process control and high manufacturing yields.