(Hong Kong)
Product Summary
The STD2NK90ZT4 is a Zener-Protected SuperMESH MOSFET with very low intrinsic capacitances, very good manufacturing repeatibility and extremely high dv/dt capability. The device is intended for switching application.
Parametrics
STD2NK90ZT4 absolute maximum ratings:(1)VDS, Drain-source voltage (VGS = 0): 900 V; (2)VDG,R Drain-gate voltage (RGS = 20 k惟): 900 V; (3)VGS, Gate- source Voltage: 30 V; (4)ID, Drain current (continuous) 2.1 A; (5)ID, Drain current (continuous) 1.3 A; (6)IDM, Drain current (pulsed): 8.4 A; (7)PTOT: Total dissipation at TC = 25℃ 70 W; Derating factor 0.56 W/℃; (8)VESD(G-S), Gate source ESD: 2000 V; (9)dv/dt, Peak diode recovery voltage slope: 4.5 V/ns; (10)Tj, Operating junction temperature: -55 to 150℃; (11)Tstg, Storage temperature: -55 to 150℃.
Features
STD2NK90ZT4 features: (1)Extremely high dv/dt capability; (2)Improved esd capability; (3)100% avalanche rated; (4)Gate charge minimized; (5)Very low intrinsic capacitances; (6)Very good manufacturing repeatibility.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 STD2NK90ZT4 |
STMicroelectronics |
MOSFET N-Ch 900 Volt 2.1Amp Zener SuperMESH |
Data Sheet |
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