(Hong Kong)
Product Summary
The IXTH96N20P is an N-Channel Enhancement Mode Power MOSFET.
Parametrics
IXTH96N20P absolute maximum ratings: (1)VDSS: 200 V; (2)VDGR: 200 V; (3)VGSM: ±20 V; (4)ID25: 96A; (5)ID(RMS): 75 A; (6)IDM:225 A; (7)IA: 60A; (8)EAR: 50mJ; (9)EAS: 1.5 J; (10)dv/dt: 10 V/ns; (11)PD: 600 W; (12)TJ: -55 to +175℃; (13)TJM: 175℃; (14)Tstg: -55 to +150℃; (15)TL: 300℃.
Features
IXTH96N20P features: (1)International standard packages; (2)Unclamped Inductive Switching (UIS)rated; (3)Low package inductance: easy to drive and to protect.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXTH96N20P |
Ixys |
MOSFET 96 Amps 200V 0.024 Rds |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
IXTH 10P60 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXTH 28N50Q |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXTH 30N60P |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXTH/IXTM 6 N80 |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXTH/IXTM 6 N80A |
Other |
|
Data Sheet |
Negotiable |
|
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|
IXTH02N250 |
Ixys |
MOSFET High Voltage Power MOSFET; 2500V, 0.2A |
Data Sheet |
Negotiable |
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