RFD16N05SM9A

16A, 50V, 0.047 Ohm, N-Channel Power MOSFET, TO-252AA

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Price:: US $0.25~0.25 / piece [Get Latest Price]

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PartNumber:: RFD16N05SM9A

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 08+

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Products Upload time: 2012-06-21

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Product Summary

The RFD16N05SM9A N-channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The transistor can be operated directly from integrated circuits.

Parametrics

RFD16N05SM9A absolute maximum ratings: (1)Drain to Source Voltage, VDSS: 50 V; (2)Drain to Gate Voltage, VDGR: 50 V; (3)Continuous Drain Current, ID: 16A; (4)Pulsed Drain Current, IDM: Refer to Peak Current Curve; (5)Gate to Source Voltage, VGS: ±20 V; (6)Power Dissipation, PD: 72w; (7)Derate above 25℃ 0.48 W/℃ (8)Operating and Storage Temperature, TJ, TSTG: -55 to 175 ℃ (9)Maximum Temperature for Soldering: Leads at 0.063in (1.6mm) from Case for 10s, TL: 300℃ (10)Package Body for 10s, See Techbrief 334, Tpkg: 260℃.

Features

RFD16N05SM9A features: (1)16A, 50V; (2)rDS(ON) = 0.047Ω; (3) Temperature Compensating PSPICE Model; (4)Peak Current vs Pulse Width Curve; (5)UIS Rating Curve; (6)175 ℃Operating Temperature; (7)Related Literature: TB334 "guidelines for Soldering Surface Mount Components to PC Boards".