(Hong Kong)
Product Summary
The MJB41CG is a complementary silicon plastic power transistor. Its package is DPAK for surface mount.
Parametrics
MJB41CG maximum ratings: (1)Collector emitter Voltage, VCEO: 100 Vdc ; (2)Collector case Voltage, VCB: 100 Vdc; (3)Emitter-Base Voltage, VEB: 5.0 Vdc ; (4)Collector Curren: Continuous: IC=6.0Adc; Peak: IC=10 Adc; (5)Base Current, LB: 2.0 Adc ; (6)Total Power Dissipation, PD: 65w at @ TC = 25℃ (7)Total Power Dissipation Derate above 25℃ 0.52 W/℃; (8)Total Power Dissipation, PD: 2.0w at @ TA = 25℃ (9)Total Power Dissipation Derate above 25℃ 0.016W/℃; (10)Unclamped Inductive Load Energy, E: 62.5 mJ ; (11)Operating and Storage Junction Temperature Range, TJ, Tstg: 鈥?5 to 150 ℃
Features
MJB41CG features: (1)Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); (2)Electrically the Same as TIP41 and T1P42 Series; (3)Pb-Free Packages are Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MJB41CG |
ON Semiconductor |
Transistors Bipolar (BJT) 6A 100V 65W NPN |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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MJB41C |
ON Semiconductor |
Transistors Bipolar (BJT) 6A 100V 65W NPN |
Data Sheet |
Negotiable |
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MJB41CG |
ON Semiconductor |
Transistors Bipolar (BJT) 6A 100V 65W NPN |
Data Sheet |
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MJB41CT4 |
ON Semiconductor |
Transistors Bipolar (BJT) 6A 100V 65W NPN |
Data Sheet |
Negotiable |
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MJB42C |
ON Semiconductor |
Transistors Bipolar (BJT) 6A 100V 65W PNP |
Data Sheet |
Negotiable |
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MJB42CG |
ON Semiconductor |
Transistors Bipolar (BJT) 6A 100V 65W PNP |
Data Sheet |
Negotiable |
|
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|
MJB42CT4 |
ON Semiconductor |
Transistors Bipolar (BJT) 6A 100V 65W PNP |
Data Sheet |
Negotiable |
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