(Hong Kong)
Product Summary
The HAT2165H-EL-E is a Silicon N Channel Power MOS FET.
Parametrics
HAT2165H-EL-E absolute maximum ratings: (1)Drain to source voltage VDSS: 30 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: 55 A; (4)Drain peak current ID(pulse): 220 A; (5)Body-drain diode reverse drain current IDR: 55 A; (6)Avalanche current IAP: 30 A; (7)Avalanche energy EAR: 90 mJ; (8)Channel dissipation Pch: 30 W; (9)Channel to Case Thermal Resistance θch-C: 4.17℃/W; (10)Channel temperature Tch: 150℃; (11)Storage temperature Tstg: –55 to +150℃.
Features
HAT2165H-EL-E features: (1)High speed switching; (2)Capable of 7 V gate drive; (3)Low drive current; (4)High density mounting; (5)Low on-resistance RDS(on) = 2.5 m? typ. (at VGS = 10 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 HAT2165H-EL-E |
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MOSFET N-CH 30V 55A LFPAK |
Data Sheet |
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